Curriculum Vitae

Publications:

Peer-reviewed journals:

• R. Potera and T. Witt- Modeling and design of forward surge performance of SiC MPS diodes, under preparation
• R. Potera and T. J. Han- Silicon Carbide Diodes in Power-Factor Correction Circuits: Device and Circuit Design Aspects, IEEE Power Electronics Magazine, vol. 6, issue 1, March 2019. DOI: 10.1109/MPEL.2018.2886105
• R. Radhakrishnan and J. H. Zhao- A 2-Dimensional fully analytical model for design of high-voltage junction barrier Schottky (JBS) diodes, Elsevier Solid State Electronics, vol. 63, issue 1, pp. 167-76, September 2011. DOI: 10.1016/j.sse.2011.06.002
• R. Radhakrishnan and J. H. Zhao- Monolithic integration of a 4H-Silicon Carbide Vertical JFET and JBS diode, IEEE Electron Device Letters, vol. 32, issue 6, pp. 785-7, June 2011. DOI: 10.1109/LED.2011.2132111

Peer-reviewed conference proceedings:

• R. Radhakrishnan, N. Cueva, T. Witt and R. L. Woodin- Analysis of Forward Surge Performance of SiC Schottky Diodes, Published in the proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM), September 17-22, 2017, Washington, D.C., Material Science Forum Vol. 924, pp. 621-4. DOI: 10.4028/www.scientific.net/MSF.924.621
• G. Dolny, Y. Sheng, Y. Fu, S. Li, R. Radhakrishnan and R. Woodin- Multi-Level Trap Assisted Tunneling Model for the Field and Temperature Dependence of SiC-JBS Reverse Leakage Current, Published in the proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM), September 17-22, 2017, Washington, D.C., Material Science Forum Vol. 924, pp. 601-4. DOI: 10.4028/www.scientific.net/MSF.924.601
• R. Radhakrishnan, M. F. MacMillan and R. L. Woodin- Doping engineering to enhance performance of a silicon carbide power device, Published in the proceedings of the IEEE Wide-Bandgap Power Devices and Applications Workshop (WiPDA), November 7-9, 2016, Fayetteville, AR. DOI: 10.1109/WiPDA.2016.7799918
• R. Radhakrishnan, T. Witt, S. Lee and R. L. Woodin- Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters, Published in the proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM), October 4-9, 2015, Giardini Naxos, Italy, Material Science Forum Vol. 858, pp. 177-80. DOI: 10.4028/www.scientific.net/MSF.858.177
• R. Radhakrishnan, T. Witt and R. L. Woodin- Temperature dependent design of Silicon Carbide Schottky diodes, Published in the proceedings of the IEEE Wide-Bandgap Power Devices and Applications Workshop (WiPDA), October 13-16, 2014, Knoxville, TN. DOI: 10.1109/WiPDA.2014.6964644
• R. Radhakrishnan and J.H. Zhao- Influence of anode layout on the performance of SiC JBS diodes, Published in the proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM), September 11-16, 2011, Cleveland, OH, Material Science Forum Vols. 717-720, pp. 937-40. DOI: 10.4028/www.scientific.net/MSF.717-720.937
• R. Radhakrishnan and J.H. Zhao- Design of an intergrated SiC power switch and flyback diode, Published in the proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM), September 11-16, 2011, Cleveland, OH, Material Science Forum Vols. 717-720, pp. 1041-4. DOI: 10.4028/www.scientific.net/MSF.717-720.1041
• K. Sheng, R. Radhakrishnan, Y. Zhang and J.H. Zhao- A Vertical SiC JFET with Monolithically Integrated JBS Diode, Proceedings of the International Symposium on Power Semiconductor Devices and ICs (ISPSD), June 14-17, 2009, Barcelona, Spain. DOI: 10.1109/ISPSD.2009.5158050

Others:

• R. Radhakrishnan- A Fresh Engineer's Brief, IEEE GOLDRush Newsletter, March 2012.pp. 12.
• R. Radhakrishnan- A monolithically integrated power JFET and Junction Barrier Schottky diode in 4H silicon carbide, Ph. D. dissertation submitted to and published atRutgers University Graduate School in January 2012.

Patents:

• R. Radhakrishnan- Graded and stepped epitaxy for constructing power circuits and devices Application No: 15/652,085 filed at USPTO by Global Power Technologies Group on July 17, 2017 and under review.
• R. Radhakrishnan- Semiconductor device based on widebandgap semiconductor materials Application No: 15/652,112 filed at USPTO by Global Power Technologies Group on July 17, 2017 and under review.
• R. Radhakrishnan- Super-junction edge termination for power devices Appliction No: 14/930,424 filed at USPTO by Global Power Technologies Group on November 2, 2015, published as US-2016-0126308-A1 on May 5, 2016 and under review.
• R. Radhakrishnan and S. A. Prabhu- Site convertible thermal structure for Circuit Breaker Application No: 1514/MUM/2005 filed at Indian Patent Office by Larsen & Toubro Ltd. on December 8, 2005, granted on July 20, 2016 as Indian Patent NO: 274307.

Work Experience

• Device Engineer at Global Power Technologies Group, Lake Forest, CA. - March 2014- Present.
• ESD Design Engineer at Texas Instruments Analog Technology Development, Dallas, TX. - January 2012- February 2014.
• Research Intern at Global Power Device Co., Irvine, CA. - June 2011- August 2011.
• Engineer/ Management Trainee in the Switchgear Design & Development Center of Larsen & Toubro Ltd., Mumbai, India- August 2004 to August 2005.
• Intern in the Transformer division of TELK Ltd. in Angamally, Kerala, India- June 2003.
• Intern in the Electrolytic Capacitor division of KELTRON Ltd. in Kallyassery, Kerala, India- June 2002.

Presentations:

• SiC MOSFETs for Power Applications, talk at the Applied Power Electronics Conference (APEC), March 26-30, 2017, Tampa, FL.
• Doping Engineering to Enhance Performance of a SiC Power Device, talk at the IEEE Wide-Bandgap Power Devices and Applications Workshop (WiPDA), November 7-9, 2016, Fayetteville, AR.
• Advances in High Voltage Power Semiconductor Devices, invited talk at Payyannur College of Engineering and Technology, Kannur, Kerala, India on February 9, 2016.
• Design of Silicon Carbide Devices to Improve Robustness to Epitaxial Variation, poster presented at the International Conference on Silicon Carbide and Related Materials (ICSCRM), October 8, 2015, Giardini Naxos, Italy.
• Temperature Dependent Analytical Design of Silicon Carbide Schottky Diodes, talk at the IEEE Wide-Bandgap Power Devices and Applications Workshop (WiPDA), October 13-16, 2014, Knoxville, TN.
• A monolithically integrated power JFET and Junction Barrier Schottky diode in 4H silicon carbide, Ph. D. dissertation defense at Rutgers University, Piscataway,NJ on December 19, 2011.
• Design and monolithic integration of SiC JFET and diode, talk given by invitation at SemiSouth Laboratories, Starkville, Mississippi on October 3, 2011.
• Influence of anode layout on the performance of SiC JBS diodes, poster presented at the International Conference on Silicon Carbide and Related Materials (ICSCRM), September 13, 2011, Cleveland, OH.
• Design of an intergrated SiC power switch and flyback diode, talk at the International Conference on Silicon Carbide and Related Materials (ICSCRM), September 13, 2011, Cleveland, OH.
• High voltage power switches and rectifiers, talk given by invitation at Texas Instruments Analog Technology Development, Dallas, TX on September 9, 2011.
• Modeling, design and development of SiC power devices, talk given by invitation at Global Power Device Company, Irvine, CA on August 23, 2011.
• SiC: Second (Power) Electronics Revolution, poster presented at Electrical Engineering Department at Rutgers University on April 30, 2011.
• Compound Semiconductor device applications in Power Electronics, talk given by invitation of Electrical Engineering association at NIT Calicut on February 19, 2009.
• 4H-SiC Merged PIN Schottky-barrier (MPS) diodes, talk given in fulfilment of Masters Degree requirements at the Electrical Engineering Department of Rutgers University on May 9, 2007.

Educational Degrees

• Doctor of Philosophy in Electrical & Computer Engineering from Rutgers, The State University of New Jersey, USA- January 2012
• Master of Science in Electrical & Computer Engineering from Rutgers, The State University of New Jersey, USA- October 2009
• Bachelor of Technology with Distinction in Electrical & Electronics Engineering from National Institute of Technology, Calicut, India- August 2004

Teaching Experience

• Course & Examination Designer and Lecturer for Pre-Calculus in the Engineers of the Future Program at Rutgers University- Summers 2011, 2010 & 2009.


• Lecturer for General Physics lab- 206 at Rutgers University- Fall 2011, Spring 2011, Fall 2010, Spring 2010, Fall 2009, Spring 2007.
• Teaching Assistant for Pre-Calculus in the Engineers of the Future Program at Rutgers University- Summer 2008.
• Lecturer for Analytical Physics lab- 229 at Rutgers University- Summer 2007, Fall 2005.
• Teaching Assistant for Extended Analytical Physics lab- 115 at Rutgers University- Fall 2006.
• Teaching Assistant for Computer Applications for Business- 170 at Rutgers University- Fall 2006, Spring 2006, Fall 2005.

Technical Reports

• SAS-based principal component analysis and identification of clustering in a given data-set submitted as part of "Interpretation of Data", a Statistics graduate course at Rutgers, in December 2010.
• Study of dependence of SiC VJFET performance and parameter distributions on SiC Wafer specifications submitted to Dow Corning Corporation in April 2010.
• Jun Hu, Gokul Ramamani, Rahul Radhakrishnan, Jian Wu, Jian. H. Zhao, Xueqing Li, Xiaohui Wang, and Leonid Fursin- Design of a Robust, Non-uniform, Guard Ring Edge Termination for Near-theoretical 5.9-kV 4H-SiC JBS Diodes (February 2008).
• Study of dependence of forward voltage drift in SiC bipolar devices on a honeycomb structure etched on the substrate submitted to Dow Corning Corportation in November 2007.
• 4H-SiC merged PIN/Schottky (MPS) diodes submitted to Department of Electrical Engineering at Rutgers University in July 2007.
• Design of circuit for SiC FET gate driver and its PCB implementation, submitted in fulfilment of Graduate Special Problems at Rutgers University in January 2006.
• Study of the hard disk drive and the design of the control systems that control disk dynamics, submitted in fulfilment of senior year project at NIT Calicut in April 2004.
• Library Catalog Search, submitted in fulfilment of junior year mini-project at NIT Calicut in March 2003.
• Relativistic Transistor, submitted in fulfilment of junior year seminar at NIT Calicut in February 2003.

Media

• Selected as a notable blog at Scientia Pro Publica- 12th Edition for the "A Posteriori" article- Charges on Sticky Tapes on September 21, 2009.
• Organised an Energy Seminar at NIT Calicut as IEEE Student Branch Chair on March 29, 2004.
• Wrote a letter to the Editor of "The Hindu" on the need to use Nuclear Energy in September 5, 2002.

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